APPARATUS FOR PREVENTING GROWTH OF NATURAL OXIDE LAYER IN VERTICAL OXIDATION FURNACE

摘要

PURPOSE: An apparatus for preventing growth of a natural oxide layer in a vertical oxidation furnace is provided to improve reliability of a semiconductor device by preventing generation of an unnecessary natural oxide layer. CONSTITUTION: A two-stage cylindrical flange(20) is installed at a lower portion of an outer tube(12). An upper gas inflow line(11a) is installed at one side of an upper end portion of the two-stage cylindrical flange(20) in order to provide a gas for preventing a natural oxide layer into an inner tube(13) and the outer tube(12). A lower gas inflow line(11b) is installed at one side of a lower end of the two-stage cylindrical flange(20) in order to provide the gas for preventing the natural oxide layer into a lower portion of a boat(14) and form an air curtain. An upper exhaust line(16a) is installed at one side of the outer tube(12). A lower exhaust line(16b) is installed at the other side of the lower end of the two-stage cylindrical flange(20). Valves(21a,21b) are installed in each side of the upper gas inflow line(11a) and the lower gas inflow line(11b), respectively. Valves(26a,26b) are installed in each side of the upper exhaust line(16a) and the lower exhaust line(16b). A pump(17) is installed between the upper exhaust line(16a) and the lower exhaust line(16b). The provided gas is injected to an injection tube through an injection hole.