发明名称 Resist composition and patterning process
摘要 <p>A resist composition contains as a base resin a polymer represented by the following formula and having a Mw of 1,000-500,000. <CHEM> R<1> is H, methyl or CO2R<2>, R<2> is alkyl, R<3> is H, methyl or CH2CO2R<2>, at least one of R<4> to R<7> is a carboxyl or hydroxyl-containing monovalent hydrocarbon group, and the reminders are independently H or alkyl, at least one of R<8> to R<11> is a monovalent hydrocarbon group of 2 to 15 carbon atoms containing a -CO2- partial structure, and the reminders are independently H or alkyl, R<12> is a polycyclic hydrocarbon group or an alkyl group containing such a polycyclic hydrocarbon group, R<13> is an acid labile group, Z is a divalent group of atoms to construct a 5- or 6-membered ring which contains a carboxylate, carbonate or acid anhydride therein, k is 0 or 1, x is a number from more than 0 to 1, "a" to "d" are from 0 to less than 1, x+a+b+c+d = 1. The resist composition has significantly improved resolution, substrate adhesiveness, and etching resistance and is very useful in precise microfabrication.</p>
申请公布号 EP1096318(A1) 申请公布日期 2001.05.02
申请号 EP20000309392 申请日期 2000.10.25
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 NISHI, TSUNEHIRO;WATANABE, TAKERU;KINSHO, TAKESHI;HASEGAWA, KOJI;KOBAYASHI, TOMOHIRO;HATAKEYAMA, JUN
分类号 H01L21/027;C08F32/08;C08G61/08;G03F7/004;G03F7/039;G03F7/38;(IPC1-7):G03F7/039 主分类号 H01L21/027
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