THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A thin film transistor and a method for manufacturing the same are provided to improve a reliability and to simplify manufacturing processes by self-aligning an impurity doping region without using an additional mask. CONSTITUTION: A substrate(10) has a side surface(13) having desired height between an upper region(11) and a lower region(12). An active layer(20) is formed on the upper and lower region(11,12) of the substrate(10). A gate insulating layer(30) is formed on the active layer. A gate electrode(42) is formed on the gate insulating layer responding to the side surface(13). An insulating layer(41) is formed on the gate insulating layer(30) and the lower region(12). Impurity doping regions(60a,60b) are formed at the active layer(20) of the upper and lower regions(11,12).