| 摘要 |
A light exposure method for ultra-fine processing for a semiconductor in which light transmittance of a resist layer in a wavelength range of the extreme ultraviolet (EUV) light is improved to enable ultra-fine processing more elaborate than is possible with conventional methods. In selectively exposing a resist layer to X-rays, a high molecular materials obtained on replacing at least a portion of hydrogen atoms of a pre-existing resist material by a substituent containing an alkyl group and/or a substituent containing an aromatic ring is used as a high molecular material of the resist layer. By replacing the hydrogen atoms of the high molecular materials with a substituent containing an alkyl group or a substituent containing an aromatic ring, the proportion of oxygen atoms in an atom of the high molecular materials becomes relatively smaller to suppress optical absorption of the entire high molecular material. |
