发明名称 |
Method of manufacturing electrostatic discharge protective circuit |
摘要 |
A method of manufacturing an electrostatic discharge protective circuit. A substrate having an inner circuit region and an electrostatic discharge protective circuit is provided. The inner circuit region comprises a first gate electrode, a source/drain region and a first suicide layer formed on the first gate electrode. The electrostatic discharge protective circuit region comprises a second gate electrode and a second silicide layer formed on the second gate electrode. A salicide block layer is formed to cover the electrostatic discharge protective circuit region. A salicide process is performed. The salicide block layer is removed to expose the electrostatic discharge protective circuit region.
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申请公布号 |
US6225166(B1) |
申请公布日期 |
2001.05.01 |
申请号 |
US19990304223 |
申请日期 |
1999.05.03 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
HSU CHEN-CHUNG;CHANG YIH-JAU |
分类号 |
H01L21/285;H01L21/8234;H01L27/02;(IPC1-7):H01L21/823;H01L21/320;H01L21/44;H01L21/476 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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