发明名称 Method of manufacturing electrostatic discharge protective circuit
摘要 A method of manufacturing an electrostatic discharge protective circuit. A substrate having an inner circuit region and an electrostatic discharge protective circuit is provided. The inner circuit region comprises a first gate electrode, a source/drain region and a first suicide layer formed on the first gate electrode. The electrostatic discharge protective circuit region comprises a second gate electrode and a second silicide layer formed on the second gate electrode. A salicide block layer is formed to cover the electrostatic discharge protective circuit region. A salicide process is performed. The salicide block layer is removed to expose the electrostatic discharge protective circuit region.
申请公布号 US6225166(B1) 申请公布日期 2001.05.01
申请号 US19990304223 申请日期 1999.05.03
申请人 UNITED MICROELECTRONICS CORP. 发明人 HSU CHEN-CHUNG;CHANG YIH-JAU
分类号 H01L21/285;H01L21/8234;H01L27/02;(IPC1-7):H01L21/823;H01L21/320;H01L21/44;H01L21/476 主分类号 H01L21/285
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