摘要 |
A semiconductor structure (10) having device isolation structures (43, 44) and shielding structures (39, 40). The shielding structures (39, 40) are formed in a semiconductor material (11) and the device isolation structures (43, 44) are formed within the corresponding shielding structures (39, 40). A noise generating device is formed within a first shielding structure (43) and a noise sensitive device is formed within a second shielding structure (44). The two shielding structures (39, 40) are grounded and prevent noise from the noise generating device from interfering with the noise sensitive device.
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