Semiconductor structure with heavily doped buried breakdown region

摘要

A semiconductor structure with a heavily doped buried breakdown region and a method for manufacture. A source region is disposed in a substrate and is doped with dopant of a type opposite that of the substrate. A drain region is disposed in the substrate at the surface and doped with dopant which is the same as that of the source region, and a gate structure is disposed on the substrate between the source and drain regions. A breakdown region is disposed in the substrate below the drain region and is heavily doped with dopant of a type opposite that of the drain region in order to control the value and location of breakdown.