| 摘要 |
This invention provides a process for accumulating different organic molecular films on oxidized III-V-group compound semiconductor substrates in order to produce a stable, high-quality organic monomolecular film that is three-dimensionally regularly arranged, as well as a process for producing a fine pattern of such organic films. This organic film is formed by immersing a III-V group compound semiconductor substrates in a vessel containing a solution containing phosphonic acid dissolved into a solvent in order to form a self-assembled film, and placing the substrate into a different solution to adsorb metal ions to the surface of the film, or immersing the substrate in a bromide or an acid or alkali solution to denature functional groups, then immersing it in a solution containing organic molecules that are selectively chemically adsorbed to the modified functional groups. These steps are repeated to form a stable, high-quality multilayer film that is three-dimensionally regularly arranged, while controlling film thickness with an accuracy on the scale of thickness of a molecular layer.In addition, the present invention realizes the formation of a fine composite three-dimensional organic self-assembled film of the order of nanometer, characterized in that the process comprises using a cleavage method or a very-high-vacuum vessel to form on a substrate with different types of III-V-group semiconductor materials mixed thereon by means of the heteroepitaxial process such as the MBE or MOCVD process, a self-assembled film of the molecules having thiol groups in a non-oxidized area and then forming on an oxidized surface a self-assembled film of molecules having phosphoric acid group, trichlorosilyl groups or alkoxylyl groups.
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