| 摘要 |
A digital to analog converter using a memory array of multi-state magnetoresistive memory elements in which a number of the memory elements are programmed in proportion to a received digital input. A source selectively applies a reference signal to the programmed memory elements in the memory array, and an analog output signal is developed at an output terminal that combines signals developed by each of the memory elements. The reference signal may be a voltage or current signal, where the output signal is a current or voltage signal, respectively. The memory array may include column and row drive circuitry and control logic that controls the drive circuitry to program the memory array and assert the reference signal to develop the output signal. The control logic may be configured to program the memory array in successive steps by first programming one or more complete memory lines and then programming one or more partial memory lines. Alternatively, the control logic and the drive circuitry may be configured to program the memory array in a single write operation. Signal processing circuitry may be provided to detect changes or threshold conditions in the memory array.
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