发明名称 Method and apparatus for built-in self-test of smart memories
摘要 A self-testing smart memory (28) is provided in which memory test circuitry (46) within the smart memory (28) writes a pattern to a data RAM (32) and a broadcast RAM (34) and then reads the data RAM (32) and the broadcast RAM (34) to determine if any failures exist within the memory locations. Furthermore, a data path tester (50) determines the functionality of a data path (30) within smart memory (28).
申请公布号 US6226766(B1) 申请公布日期 2001.05.01
申请号 US19940224407 申请日期 1994.04.07
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 HARWARD MARK G.
分类号 G06F12/16;G11C29/00;G11C29/12;G11C29/36;(IPC1-7):G11C29/00 主分类号 G06F12/16
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