High density plasma nitridation as diffusion barrier and interface defect densities reduction for gate dielectric

摘要

A method of constructing a gate dielectric on a semiconductor surface includes cleaning a silicon surface then growing a silicon nitride barrier layer on the silicon surface using a high density plasma (HDP) of nitrogen. A gate dielectric layer is then deposited on the silicon nitride layer and a second silicon nitride layer is then grown on the dielectric layer, also using an HDP nitrogen plasma, followed by deposition of the conductive gate layer. The HDP nitrogen plasma is heated using an inductively coupled radio frequency generator. The invention also includes a gated device including a gate dielectric constructed on a semiconductor surface by the method of the invention.