| 摘要 |
In a dynamic random access memory (DRAM) being operated at a low power-supply voltage, a bit line sense-amplifier for amplifying the electric charge first amplifies a cell charge applied to a bit line with a sufficient potential difference, prior to sensing the cell charge in a bit line sense-amplifier, thereby stably and quickly performing a sensing operation. In a semiconductor memory device having a cell array block having a plurality of memory cells, and a bit line sense-amplifier for sensing and amplifying a cell charge transmitted to a true bit line or a complement bit line, a bit line sense-amplifier for amplifying the electric charge includes: an electric charge amplifier which amplifies the cell charge transmitted to the true bit line and the complement bit line with a sufficient potential difference, and then transmits the amplified cell charge to the bit line sense-amplifier; and a switching element which is connected to the true bit line and the complement bit line between the cell array block and the electric charge amplifier, and switches a connection between the cell array block and the electric charge amplifier.
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