发明名称 |
Method for manufacturing semiconductor devices utilizing plurality of exposure systems |
摘要 |
A pattern can be written in accordance with a distortion which changes depending upon exposure conditions of the optical exposure system and exposed pattern features, and a pattern can be written with a high alignment accuracy by the optical exposure system and an electron beam lithography system or two optical exposure systems. A pattern which is exposed by optical exposure system divided into very small areas shown by broken lines, and pattern feature amounts (fx), (fy) at each area are calculated. A correction amount is obtained by using the pattern feature amount and the position within an exposure field as parameters based on exposure distortion examined by a standard pattern predeterminedly.
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申请公布号 |
US6225011(B1) |
申请公布日期 |
2001.05.01 |
申请号 |
US19990294428 |
申请日期 |
1999.04.20 |
申请人 |
HITACHI, LTD. |
发明人 |
GOTOH YASUKO;HASEGAWA NORIO;ASAI NAOKO;HAYANO KATSUYA;MATSUZAKA TAKASHI;KAWASAKI KATSUHIRO |
分类号 |
H01L21/027;G03F7/20;H01J37/304;(IPC1-7):G03F9/00 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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