| 摘要 |
In a method for manufacturing a semiconductor device in a wafer having a device formation area and an inspection pattern formation area, an interconnection layer is formed in the device formation area with forming no interconnection layer in the inspection pattern formation area. An interlayer insulating film is formed to cover the whole surface, and then, is selectively removed to form a first hole exposing a portion of the interconnection layer in the device formation area and a second hole exposing a portion of a silicon layer in the inspection pattern formation area. An aluminum-based alloy is filed into the first and second holes. In the second hole, spiking occurs into the silicon layer when aluminum from the aluminum-based alloy comes in contact with the silicon layer. After filling, the surface above the second hole is observed for an indication that spiking occurred into the silicon layer. A failure to observe spiking indicates an interconnection defect within the first hole in the device formation area.
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