Semiconductor structure based on silicon carbide material, with a plurality electrically different partial regions

摘要

The SiC semiconductor structure contains at least three semiconductor regions. The surface area of the third semiconductor region encompasses that of the second semiconductor region as a second partial area, which in turn encloses the surface of the first semiconductor region as a first partial area. The contour of the edge of the second partial area is determined by the contour of the edge of the first partial area to the effect that the second partial area can be represented essentially as a specially enlarged mapping of the first partial area, the deviation of the contour of the edge of the second partial area from the exact contour that results in the course of the mapping being at most ±10 nm.