发明名称 |
Leaky lower interface for reduction of floating body effect in SOI devices |
摘要 |
A silicon on insulator (SOI) device includes an electrically-conducting interface region along a portion of the interface between the insulator and a semiconductor layer atop the insulator. The electrically-conducting interface region provides a "leaky" electrical coupling between the body and source regions of a transistor device such as a "MOSFET", thereby reducing floating body effects of the device. A method of forming such a semiconductor device includes forming the electrically-conducting interface region by damaging or implanting materials in the insulator and/or the semiconductor in the vicinity of the interface therebetween. The method may include producing a stepped interface region, such as by etching, in order to aid properly locating the transistor device relative to the electrically-conducting interface region.
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申请公布号 |
US6225667(B1) |
申请公布日期 |
2001.05.01 |
申请号 |
US20000484634 |
申请日期 |
2000.01.18 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
BUYNOSKI MATTHEW S.;WOLLESEN DONALD L. |
分类号 |
H01L29/786;(IPC1-7):H01L29/00 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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