| 摘要 |
According to a first aspect of the present invention, a plurality of PN junctions are formed at the surface of a semiconductor substrate under a belt-like conductive film having a spiral shape which constitutes an inductance device. A reverse bias voltage is applied to the PN junctions, and the surface of the substrate is completely depleted. Since the reverse bias voltage is applied to the PN junctions, even though the impurity density of the surface of the substrate is high and the adjacent PN junctions are separated to a degree, the extension of the depletion layers can be increased and complete depletion of the surface of the substrate can be achieved.
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