| 发明名称 |
Method of fabricating crack resistant inter-layer dielectric for a salicide process |
| 摘要 |
A method for fabricating a crack resistant inter-layer dielectric for a salicide process. The method includes forming an insulating layer on a provided substrate, forming a planarized inter-layer dielectric layer on the insulating layer, and performing a short-duration thermal treatment to increase the density of the inter-layer dielectric layer.
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| 申请公布号 |
US6225209(B1) |
申请公布日期 |
2001.05.01 |
| 申请号 |
US19980150525 |
申请日期 |
1998.09.10 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
LIN YEI-HSIUNG;HUANG CHIH-CHUN;LIN CHEN-BIN;CHUNG CHENG-HUI |
| 分类号 |
H01L21/314;H01L21/316;H01L21/336;H01L21/768;H01L21/8234;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/314 |
| 代理机构 |
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