Semiconductor memory device, nonvolatile semiconductor memory device, and their data reading method

摘要

In order to eliminate erroneous reading of data by preventing noise which might otherwise be transmitted at the data reading time through parasitic capacitance in the data lines to other data lines, switches (Qt1 and Qt1') are interposed between a sense amplifier (SA) for amplifying the potential of a data line (DL) and the data line, and the sense amplifier is fed with an operating voltage after the potential of the data line is transmitted to the sense amplifier, and the switch is turned off.