| 摘要 |
Implantation of germanium (45) into a PMOS buried channel to permits the enhancement implant profile (to 45) to be made more shallow. The shallow profile will reduce or eventually solve P-channel buried channel-induced short channel effects and enable further decrease in device length to deep submicron range.Benefits include better short channel characteristics, i.e., higher punch through voltage BVDSS, less VT sensitivity to the drain voltage (defined as curl) and better subthreshold leakage characteristics.
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