| 摘要 |
A method of polishing semiconductor wafers. The method includes spacing the polishing pad from the center of the wafer by a selected offset distance (406) and translating the polishing pad in a manner wherein the translation speed varies as the pad is moved across the surface of the wafer (414). A method (FIGS. 7 and 9) for calibrating a polishing apparatus includes iteratively selecting an offset distance, performing a polish, inspecting the resulting removal profile, and repeating until a desired characteristic (FIG. 6C) in the removal profile is attained. |
