发明名称 Improved heat dissipation in an amplifier circuit by interleaved configuration of two power transistors
摘要 In an output stage of an electronic signal processing circuit such as that used for transmission from a mobile telephone set the amplifier circuit comprises two power transistors (A, B) or type FET. The power transistors are used for amplifying different signals such as signals for different wavelength bands in a duel band telephone set and they are not used simultaneously. Each power transistor comprises a multitude of elementary transistors (19, 21) or "fingers" which are interdigitated to form an interleaved configuration, the element transistors of one transistor alternating with the element transistors of the other transistor. Thereby the effective area which can receive heat dissipated by the element transistors will be twice that used when the element transistors are located in two geometrically separated groups which will allow a higher power load on each transistor element.
申请公布号 AU7821000(A) 申请公布日期 2001.04.30
申请号 AU20000078210 申请日期 2000.09.28
申请人 TELEFONAKTIEBOLAGET LM ERICSSON (PUBL) 发明人 JONAS TIREN;JESPER ENGVALL
分类号 H01L29/80;H01L27/088;H01L29/06;H03F1/00;H03F1/52;H03F3/195;H03F3/60 主分类号 H01L29/80
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