| 摘要 |
PROBLEM TO BE SOLVED: To prevent operation of a parastitic bipolar transistor, while increasing in the channel resistance or on-resistance of a power MOSFET is suppressed. SOLUTION: First and second gate electrodes 5 and 5a, parallel to each others, are so formed as to be al while striding the perameter of a body well formed on the surface of a semiconductor substrate, and back gate regions 11 and 11a of the same conductive type are formed in a part of the semiconductor substrate surface sandwiched between the first and second gate electrodes. An opposite conductivity type source region 6 is formed in a region on the semiconductor substrate surface sandwiched between the first and second gate electrodes, except for the back gate region. A channel region is provided respectively on the body well surface directly below the first and second gate electrodes, with the back gate region contacting to the body well by one part of the parts directly below the first and second gate electrodes. |
