发明名称 |
SEMICONDUCTOR PRESSURE SENSOR |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor having high sensitivity and high pressure resistance. SOLUTION: This semiconductor pressure sensor has a pressure sensor chip formed with a recessed part having a thin diaphragm 7 by isotropically etching a portion of an n-type silicon substrate 1, and formed with a diffused resistor detecting a pressure change from a bending amount of the diaphragm 7 and converting the pressure change into an electric signal; and a pedestal having a pressure introduction hole 10 for introducing a pressure. The pressure sensor chip and the pedestal are joined such that the inner space of the recessed part communicates with the pressure introduction hole 10. An area of an opening end 17 of the recessed part is set to 0.5-0.8 mm2.
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申请公布号 |
JP2001116637(A) |
申请公布日期 |
2001.04.27 |
申请号 |
JP19990293050 |
申请日期 |
1999.10.14 |
申请人 |
MATSUSHITA ELECTRIC WORKS LTD |
发明人 |
AKAI SUMIO;TAKAKURA NOBUYUKI |
分类号 |
G01L9/04;G01L9/00;H01L29/84;(IPC1-7):G01L9/04 |
主分类号 |
G01L9/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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