| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology capable of easily burying the recessed portions of wiring trenches, via holes, contact holes of a semiconductor substrate with a wiring metal by a sputtering method, a plating method or the like. SOLUTION: A (Cu-C) seed layer is formed by coating a semiconductor substrate in which Cu to be used for a wiring is not yet buried in the recessed portions of wiring trenches, via holes and contact holes with a Cu fine-particle dispersing liquid in which Cu fine particles are dispersed in an organic solvent or a Cu organic salt solution and by burning the substrate on which the coated film is formed to evaporate and burn the organic substance in the coated film.
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