| 摘要 |
PROBLEM TO BE SOLVED: To eliminate difference in brightness within a panel surface by reducing leak current, when a thin-film transistor is off and to improve minute machining accuracy and mating accuracy of photolithographic technique, according to the tendency toward making TFT fine. SOLUTION: In this semiconductor of a thin-film transistor formed on an insulation substrate, the film thickness of source and drain pats is made larger than the film thickness of a semiconductor part directly below or above a gate electrode via a gate insulation film.
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