| 摘要 |
PROBLEM TO BE SOLVED: To micronize a high breakdown voltage MOS transistor. SOLUTION: There are provided a first power-source line (N+type source layer 30), which is formed on a semiconductor substrate 1, applied with a first voltage (Vdd), and a second power-source line (gate electrode 18D), which is formed on an element isolation film 11 which is so formed as to adjoin the first power-source line, applied with a second voltage (Vg) different from the first voltage, in parallel. Here, since an inter-layer insulating film 38 is present between the element separation film 11 and the second power source line, no conventional guard band layer is required under the inter-layer insulating film 38.
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