| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a thin-film transistor with suppressed parasitic capacity and improved manufacturing yield, its manufacturing method, and a liquid crystal display provided with the transistor. SOLUTION: A bottom-gate-type thin-film transistor 1 is constituted of a gate electrode 4 formed on a substrate, a gate insulation film 6 formed on the gate electrode, an operation semiconductor film 8 formed on the gate insulation film 6 on the gate electrode 4, a channel protection film 3 formed on the operation semiconductor film, and source/drain electrodes 14 and 15 connected to the operation semiconductor film, while sandwiching the channel protection film 3. In the transistor 1, the channel protection film 3 is provided with a first insulation layer 10 that comes into contact with the upper interface of the operation semiconductor film 8 and a second insulation layer 11 formed on the first insulation layer.</p> |
