发明名称 |
SEMICONDUCTOR DIODE WITH LOW RESISTANCE OF CONTACT |
摘要 |
semiconductor devices. SUBSTANCE: invention refers to device manufactured from narrow-slit semiconductors operating in infrared range of wave lengths. Proposed semiconductor diode with low resistance of contact includes active layer of p- or n- type material with energy of forbidden zone not less than 0.5 OeV forming p-n junction with first layer of doped material of n-type, second layer of doped material of n-type which can be located close to active layer or separated from it by other layers. Second layer of doped material of n-type is transparent for emitted or absorbed radiation whose energy is higher than energy of forbidden zone. EFFECT: provision for low resistance of contact, for transparency to radiation generated by device, reduced loss of generated radiation. 7 cl, 14 dwg
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申请公布号 |
RU2166222(C2) |
申请公布日期 |
2001.04.27 |
申请号 |
RU19980112013 |
申请日期 |
1996.11.27 |
申请人 |
DZE SEKRETEHRI OF STEJT FOR DEFENS |
发明人 |
TIMOTI EHSHLI;GREKHEM DZHON PRAJS |
分类号 |
H01L29/43;H01L21/28;H01L29/20;H01L29/205;H01L31/0216;H01L33/40;H01S5/00;H01S5/183;H01S5/20;H01S5/223;H01S5/32;(IPC1-7):H01L33/00;H01L31/022 |
主分类号 |
H01L29/43 |
代理机构 |
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地址 |
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