| 摘要 |
PROBLEM TO BE SOLVED: To obtain a positive photoresist composition having high sensitivity and high resolving power of <=0.157 μm, giving a rectangular resist pattern, having good wettability with a developing solution and less liable to cause development defects in the production of a semiconductor device and to obtain a positive photoresist composition which ensures a small dimensional shift in pattern transfer to a lower layer in an oxygen plasma etching step in a two-layer resist process. SOLUTION: The positive photoresist composition contains an acid decomposable polymer containing specified silicon-containing repeating units and repeating units with one of specified structures and having solubility to an alkali developing solution increased by the action of an acid. |
