| 摘要 |
PROBLEM TO BE SOLVED: To obtain a positive resist composition for exposure with far UV suitable for far ultraviolet light, particularly ArF excimer laser light of 193 nm wavelength and having good sensitivity, resolving power and defocus latitude of a contact hole pattern. SOLUTION: The positive photoresist composition contains a compound which generates an acid when irradiated with active light or radiation and a resin having repeating units with a specified structure and repeating units with a specified structure having an alicyclic ring in the principal chain and having a group which is decomposed by the action of the acid. The resin further has a group represented by a specified structural formula in at least one end of its molecular chain. |
