| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is isolated by a shallow recess type element isolation structure which has such a structure that there is no generation of dishing in an isolated region. SOLUTION: This semiconductor device 10 has, in a silicon substrate 18, a bipolar transistor 12 isolated by a shallow recess type element isolation structure. The shallow recess type element isolation structure for isolating the bipolar transistor 12 consists of a first shallow element isolation recess 20a demarcating a collector well 22 which constitutes the collector of the bipolar transistor 12 and a second shallow element isolation recess 20b formed outside and away from the first element isolation recess 20a. A well 21 for pn separation which has the opposite conductivity type from that of the collector well 22 is so formed in the silicon substrate 18 as to continuously surround the collector well 22, stretching over the entire distance between the first element isolation recess 20a and the second element isolation recess 20b.
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