发明名称 INSULATING FILM EVALUATION TEST STRUCTURE
摘要 PROBLEM TO BE SOLVED: To obtain an insulating film evaluation test structure which is capable of easily detecting fault points. SOLUTION: An insulating film evaluating test structure is provided with a CCD structure equipped with a semiconductor substrate 1, a gate-insulating film 2 formed on all the main surface of the substrate 1 to be detected, gate electrodes 3a to 3i which are arranged at regular intervals on the gate insulating film 2, a wiring 20 connected to the gate electrodes 3a, 3d, and 3g, a wiring 21 connected to the gate electrodes 3b, 3e, and 3h, and a wiring 22 connected to the gate electrodes 3c, 3f, and 3i. Furthermore, the insulating film evaluating test structure is equipped with a read-out circuit 5 composed of an inverter 4 and others and is connected to the output stage of the CCD structure.
申请公布号 JP2001118900(A) 申请公布日期 2001.04.27
申请号 JP19990299295 申请日期 1999.10.21
申请人 MITSUBISHI ELECTRIC CORP 发明人 SHIGA KATSUYA;MURATA NAOFUMI
分类号 H01L21/66;G01N27/92;G01R31/26;H01L23/544;(IPC1-7):H01L21/66 主分类号 H01L21/66
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