发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device, which has columnar electrodes and has a superior durability to a thermal stress. SOLUTION: A semiconductor device is provided with a semiconductor element 14 having a plurality of electrode pads 12 on its surface, a plurality of columnar electrodes 16 connected with the plurality of the above pads 12, a resin layer 18 covering the element 14 and the electrodes 16 and external terminals 20 arranged on the surface of the layer 18, in such a way that the terminals 20 are electrically connected with the electrodes 16 and the electrodes 16 are formed into a constitution, where each electrode 16 comprises a wire part 16a, which is extended from each pad on the element 14, and a swelled part 16b, which is extended from each external terminal 20 and has a sectional area wider than that of the wire part 16a.
申请公布号 JP2001118876(A) 申请公布日期 2001.04.27
申请号 JP20000119616 申请日期 2000.04.20
申请人 FUJITSU LTD 发明人 AIBA YOSHITAKA;NOMOTO TAKASHI;FUJISAWA TETSUYA;SEKI MASAAKI;SATO MITSUTAKA;SHIBA NORIAKI;IMAMURA KAZUYUKI;FUJIMOTO YASUNORI;KASAI JUNICHI
分类号 H01L23/12;H01L21/56;H01L21/60;H01L21/68;H01L21/768;H01L23/31;H01L23/48;H01L23/485;H01L23/49;H01L23/498;H01L25/065;H01L25/10 主分类号 H01L23/12
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