| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor having a wide usable ambient temperature range. SOLUTION: This semiconductor pressure sensor has a semiconductor substrate 1 including a thin recessed diaphragm 17, formed with piezoelectric resistors 2 each detecting a pressure change from a bending amount of the diaphragm 17 and converting the pressure change into an electric signal, and formed with signal processing circuits 3 each receiving the electric signal from the piezoelectric resistor 2; and a pressure introduction pipe 6 including a pressure introduction port 21, joined to the semiconductor substrate 1 such that the recessed inner space communicates with the pressure introduction port 21. The pedestal is made of a metal material excellent in heat conduction.
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