| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and a device for preparing a thin film on a substrate, which can solve the problem that a single crystal thin film that has a large grain diameter, a small structure defect, and a large area cannot be easily formed by a conventional method and device for preparing the thin film, and costs are increased since the substrate with high-temperature resistance is required. SOLUTION: In the thin film preparation method, a high-frequency voltage for generating a plasma is applied from an antenna with an insulating plate being provided at the upper part of a vacuum container, a feed gas in the vacuum container is changed into a plasma, a magnetic field being generated by a magnetic field coil being provided both sides of the vacuum container is applied in an absorption gas molecule, and a thin film is prepared, thus accelerating the movement of the absorption molecule gas by Larmor movement around the line of magnetic force of the absorption molecule gas, forming the thin film that has a large grain diameter, a small structure defect, and a large area on the substrate, eliminating the need for increasing temperature on the surface of the substrate, and hence making the substrate inexpensive. |
