SURFACE PURIFICATION METHOD, SURFACE SMOOTHNESS IMPROVEMENT METHOD, AND PURIFICATION DEVICE OF COMPOUND SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method for purifying the surface of a compound semiconductor substrate that has been improved to eliminate C in addition to an oxide on the surface. SOLUTION: A compound semiconductor substrate 1 is carried into a treatment chamber 1. Gas containing a halogen atom is brought into contact with the surface of the compound semiconductor substrate 1. The compound semiconductor substrate 1 is heated.