| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which allows an effective removal of an etching reactive product deposited as a residue on a dry-etched substrate when patterning an electrode film made of platinum group metal of the periodic table of elements such as gold, silver, platinum, and iridium and its alloy on the silicon substrate. SOLUTION: A method for manufacturing a semiconductor device wherein a metal electrode film 2 is patterned through the resist and a pattern mask on an interlayer base material layer 3 as an insulation film formed on a silicon substrate 4. After sputtering a seed metal for an electrode film on the insulation film, a resist film is formed and dry-etched through a pattern mask and then is ashed. Water vapor 6 is blown under pressure against an etching reactive product 5 deposited as a residue on a side wall face of the resist and of the electrode film, and then a washing process is executed to form the metal electrode film according to a specified pattern.
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