POSITIVE PHOTORESIST COMPOSITION FOR EXPOSURE WITH FAR ULTRAVIOLET RAY

摘要

PROBLEM TO BE SOLVED: To obtain a positive photoresist composition for exposure with far UV excellent in shelf stability and free from the occurrence of development defects in development. SOLUTION: The positive photoresist composition contains a compound which generates an acid when irradiated with active light or radiation, a polymer having repeating units with a specified structure and repeating units with a specified structure having an alicyclic ring in the principal chain and having a group which is decomposed by the action of the acid and a mixed solvent containing at least one selected from the group comprising butyl acetate and propylene glycol monoalkyl ether carboxylates and at least one selected from the group comprising ethyl lactate and propylene glycol monoalkyl ethers.