| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device having improved characteristics and reliability. SOLUTION: This semiconductor device is provided with an insulation substrate, a semiconductor film containing a region that is formed at the upper portion of the insulation substrate and has added P-type or N-type impurities, a gate insulation film that is formed in contact with the semiconductor film, a gate electrode where a side surface formed in contact with the gate insulation film is into a tapered shape, an interlayer insulation film formed at the upper portion of the gate electrode, and wiring that is formed on the interlayer insulation film and is connected to a region, where the P-type or N-type impurities have been added.</p> |
