| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing composition for effectively and stably polishing and machining the edge of a semiconductor wafer that is made of a silicon wafer, a compound wafer, or the like. SOLUTION: In the polishing composition for polishing a semiconductor wafer edge, an average primary particle diameter being calculated by full sphere conversion from a specific surface area being measured by the BET method ranges from 8 to 50 nm, an average secondary particle diameter B being measured by the laser scattering method using a micro track UPA ranges from 12 to 200 nm, a ratio B/A of the average primary particle diameter A to the average secondary particle diameter B ranges from 1.4 to 12, the concentration of a silicon oxide particle for entire solution is 2-30 wt.% in a colloidal solution, and also a buffering operation is achieved between pH 8-11 containing a buffering solution where a weak acid in that the logarithmic value of the inverse number of an acid dissociation constant at 25 deg.C ranges from 8.0 to 12.5 and a strong base are combined. |
