| 摘要 |
PROBLEM TO BE SOLVED: To improve light take out efficiency by suppressing total reflection on the interface between a semiconductor light emitting element and a body covering it. SOLUTION: Light transmitting bodies 12, 21 covering the semiconductor light emitting element 5 of a semiconductor light emitting device contain a phosphor 22 being excited by absorbing at least a part of light emitted from the light emitting element 5 to emit light having a different wavelength wherein the emission layer 5d of the semiconductor light emitting element 5 and the phosphor 22 comprise a compound semiconductor of substantially identical composition. Since the light transmitting bodies 12, 21 contain the phosphor 22 having a refractive index substantially identical to that of the emission layer 5d of the semiconductor light emitting element 5, the light transmitting bodies 12, 21 can be constituted entirely to have a refractive index close to that of the emission layer 5d. Consequently, the critical incident angle θc of total reflection can be increased and reflection of light emitted from the light emitting element 5 can be suppressed significantly on the interface to the light transmitting bodies 12, 21. |
