| 摘要 |
PROBLEM TO BE SOLVED: To obtain a positive photoresist composition having high revolving power, giving a rectangular photoresist and ensuring low edge roughness of a line pattern in the production of a semiconductor device. SOLUTION: The positive photoresist composition contains a resin containing repeating units of formula I and, e.g. repeating units of formula IIa and having solubility to an alkali developing solution increased by the action of an acid, a compound which generates the acid when irradiated with active light or radiation, an organic solvent which dissolve those components, an organic basic compound, a fluorine- and/or silicon-containing surfactant and a nonionic surfactant. In the formula I, R1-R3 are each alkyl, haloalkyl, halogen, alkoxy or the like and (n) is 0 or 1. In the formula IIa, Y is H, methyl or the like, L is a single bond or a divalent combining group and Q is H or a group capable of generating a carboxylic acid by acid decomposition. |
