| 摘要 |
PROBLEM TO BE SOLVED: To provide a p-type nitride semiconductor, having a high positive hole concentration of at least 1×1018 cm-3 at room temperature. SOLUTION: An organic metal vapor-phase growth method is used with organic metal containing In, Ga, and Mg and ammonium gas as the material gas, while nitrogen gas is used as the carrier gas. Here, an AlN buffer layer 2 of 20 nm is grown on a sapphire substrate 1 at 550 deg.C, and a GaN buffer layer 3 of 1,100 nm is grown on the AlN buffer layer 2 at 1,000 deg.C. Furthermore, a Mg-doped InGaN layer 4 is grown on the GaN buffer layer 3 at 780 deg.C while hydrogen atom taken into InGaN during growth under thermal treatment at 500 deg.C or higher in a nitrogen atmosphere is taken out, thus providing a P-type nitride semiconductor. |
