SEMICONDUCTOR LIGHT EMITTING ELEMENT AND FABRICATING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To obtain a UV light emitting element emitting light on the side of longer wavelength than that determined by the band gap of an active layer. SOLUTION: An undoped AlGaN layer of 10 nm or thicker having a band gap equal to or larger than that of a p-AlGaN clad layer is inserted between the clad layer and an active layer.