METHOD FOR USING SUB-MICRON SILICIDE STRUCTURES FORMED BY DIRECT-WRITE ELECTRON BEAM LITHOGRAPHY FOR FABRICATING MASKS FOR EXTREME ULTRA-VIOLET AND DEEP ULTRA-VIOLET LITHOGRAPHY

摘要

To fabricate a mask for deep ultra-violet lithography, a layer of material opaque to deep ultra-violet radiation, a layer of silicon and a layer of metal are successively deposited on a transparent substrate. A focused electron beam is displaced on the superposed layers of metal and silicon to form a structure of etch-resistant metal/silicon compound. Finally, the three layers are etched to leave on the substrate only the structure of etch-resistant metal/silicon compound and the layer of material opaque to deep ultra-violet radiation underneath that structure to thereby form a mask for deep ultra-violet lithography. To fabricate a mask for extreme ultra-violet lithography, an etch stop layer, a repair buffer layer, a layer made of extreme ultra-violet radiation absorbent material, a layer of silicon and a layer of metal are successively deposited on a substrate made of extreme ultra-violet reflective material. A focused electron beam is displaced on the superposed layers of metal and silicon to form a structure of etch-resistant metal/silicon compound. The layer of metal, the layer of silicon, the layer made of extreme ultra-violet absorbent material, and the repair buffer layer are etched to leave on the substrate (a) the structure of etch-resistant metal/silicon compound and (b) the layer madeof extreme ultra-violet absorbent material and the repair buffer layer underneath that structure to form the mask for extreme ultra-violet lithography.