| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and a device for forming an HSG-Si layer in a wafer. SOLUTION: The device for forming an HSG-Si layer is composed of a housing that forms a machining chamber, a first heater that is fixedly installed at the lower part of the machining chamber and has a wafer being positioned on an upper surface, a second heater that is positioned at the upper part of the machining chamber, and an insulating member that prevents heat being generated in the first heater from being transferred to the outside of the machining chamber. A temperature adjustment system adjusts the temperature of the first and second heaters. The formation method of the HSG-Si layer includes a step for positioning the wafer on the first heater, a step for utilizing the first and second heaters for eliminating the water of the wafer, a step for injecting the feed gas of HSG-Si onto the upper surface of the wafer for forming amorphous silicon on the wafer, and a step for annealing the wafer for specific time for changing the amorphous silicon to the HSG-Si layer. |
