| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, together with its manufacturing method, where defects in transistor characteristics are suppressed. SOLUTION: This method includes a process A where a polish stopper layer 14 comprising a prescribed pattern is formed on a substrate 10, a process B where a part of the substrate is removed with the polish stopper layer 14 as a mask to form a trench 16, a process C where a trench oxide film 18 is formed on the surface of substrate 10 which constitutes the trench 16, a process D where an insulating layer 21 is formed over the entire surface to fill the trench 16, a process E where the insulating layer 21 is polished by a chemical/ mechanical polishing method, a process F where the polish stopper layer 14 is removed, and a process G where a part of the insulating layer 21 is etched to form a trench insulating layer 20. Here, a process (a), where an etching stopper layer 90 for the trench oxide film 18 is formed on it, at least above the trench 16, is included, and the etching stopper layer 90 is less likely to be etched, as compared to the insulating layer 21 in the process G.
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