发明名称 SEMICONDUCTOR AMOUNT-OF-DYNAMICS SENSOR AND MANUFACTURING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor amount-of-dynamics sensor for readily securing a closing property in a cap when protecting the movable part of beam structure with the cap. SOLUTION: A sensor element part, consisting of a beam structure 2 as a movable part, fixed electrodes 9a-9c, and the like, is provided on the upper surface of a silicon substrate 17, an insulated and separated conductive thin film 19 is embedded between a sensor element part and the substrate 17, a wiring pattern and lower electrodes 22-25 formed by the conductive thin film 19 are electrically connected to electrode take-out parts 27a-27d arranged being nearly flush with the sensor element part, at the same time, a flat part 30 without steps so that the sensor element part is surrounded is formed between the electrode draw-out part on the substrate 17 and the sensor element, one surface side of a cap substrate 200 with a recessed part 202 at one surface side is joined to the flat part 30, and the sensor element part is covered with the recessed part 202 for protection.
申请公布号 JP2001119040(A) 申请公布日期 2001.04.27
申请号 JP19990295500 申请日期 1999.10.18
申请人 DENSO CORP 发明人 YAMAMOTO TOSHIMASA;TAKEUCHI YUKIHIRO;KATO NOBUYUKI
分类号 G01P15/125;H01L29/84;(IPC1-7):H01L29/84 主分类号 G01P15/125
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