| 摘要 |
PROBLEM TO BE SOLVED: To improve the destruction of junction between a source and a drain, current leakage and the drawing of charges. SOLUTION: A source 26 and a drain 28, each of which has a depth of not less than 1.0μm, are formed across a field oxide film 24. The end parts of the field oxide film 24 are arranged at positions in lightly-doped diffusion layers 26a and 28a. A diffused layer for well contact 32 is formed in a position detached from a source 26 by a field oxide film 30, and the source 26 and the diffusion layer for well contact 32 are conducted by a wiring 39 and substrate potential is given. A gate electrode 34 is formed on the fixed oxide film 24, and the gate electrode 34 and the drain 28 are conducted by a wiring 38. An input/output terminal 40 and an inner circuit are connected to the wiring 38.
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